Open AccessPoly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode
Author(s) -
Xiankun Zhang,
Qingliang Liao,
Shuo Liu,
Zhuo Kang,
Zheng Zhang,
Jia Du,
Feng Li,
Shuhao Zhang,
Jiankun Xiao,
Baishan Liu,
Yang Ou,
Xiaozhi Liu,
Lin Gu
Publication year - 2017
Publication title -
nature communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.559
H-Index - 365
ISSN - 2041-1723
DOI - 10.1038/ncomms15881
Subject(s) - homojunction , monolayer , vacancy defect , sulfur , materials science , doping , photodiode , work function , self healing , optoelectronics , nanotechnology , chemistry , layer (electronics) , crystallography , pathology , medicine , alternative medicine , metallurgy
We establish a powerful poly(4-styrenesulfonate) (PSS)-treated strategy for sulfur vacancy healing in monolayer MoS 2 to precisely and steadily tune its electronic state. The self-healing mechanism, in which the sulfur vacancies are healed spontaneously by the sulfur adatom clusters on the MoS 2 surface through a PSS-induced hydrogenation process, is proposed and demonstrated systematically. The electron concentration of the self-healed MoS 2 dramatically decreased by 643 times, leading to a work function enhancement of ∼150 meV. This strategy is employed to fabricate a high performance lateral monolayer MoS 2 homojunction which presents a perfect rectifying behaviour, excellent photoresponsivity of ∼308 mA W −1 and outstanding air-stability after two months. Unlike previous chemical doping, the lattice defect-induced local fields are eliminated during the process of the sulfur vacancy self-healing to largely improve the homojunction performance. Our findings demonstrate a promising and facile strategy in 2D material electronic state modulation for the development of next-generation electronics and optoelectronics.