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P‐N Junctions—A Tool for Temperature Measurement
Author(s) -
Enfield Carl G.,
Tromble John M.
Publication year - 1970
Publication title -
water resources research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.863
H-Index - 217
eISSN - 1944-7973
pISSN - 0043-1397
DOI - 10.1029/wr006i003p00981
Subject(s) - materials science , sensitivity (control systems) , linearity , diode , voltage , semiconductor , optoelectronics , transducer , silicon , voltage drop , temperature measurement , electrical engineering , electronic engineering , engineering , thermodynamics , physics
Silicon semiconductors were investigated for use as temperature transducers (−25°C → +75°C), and were found to have good stability, linearity, and high sensitivity. When one ma of forward current was applied to a diode, a sensitivity of approximately 1.9 mv/°C was obtained with a forward voltage drop of approximately 600 mv.
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