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Characterization of power‐dependent high‐ T c superconducting microstrip line by modified spectral domain method
Author(s) -
Liu Yaozhong,
Itoh Tatsuo
Publication year - 1993
Publication title -
radio science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.371
H-Index - 84
eISSN - 1944-799X
pISSN - 0048-6604
DOI - 10.1029/93rs01405
Subject(s) - resistive touchscreen , microstrip , superconductivity , line (geometry) , nonlinear system , attenuation , materials science , thin film , boundary value problem , power (physics) , characterization (materials science) , phase (matter) , domain (mathematical analysis) , mathematical analysis , current (fluid) , boundary (topology) , computational physics , physics , high temperature superconductivity , condensed matter physics , optics , mathematics , computer science , thermodynamics , geometry , quantum mechanics , nanotechnology , computer vision
Surface resistance of the high‐ T c superconducting thin film may depend upon the power level of the thin film surface. An iteration method using the spectral domain technique with an application of complex resistive boundary condition is adopted to analyze such a nonlinear problem. Numerical results for the phase and attenuation constants and current distributions are given for different structural and material parameters.