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Dielectric Resonator Negative Group Delay Circuit
Author(s) -
Gu Taochen,
Wan Fayu,
Thakur Preeti,
Thakur Atul,
Lalléchère Sébastien,
Rahajandraibe Wenceslas,
Ravelo Blaise
Publication year - 2021
Publication title -
radio science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.371
H-Index - 84
eISSN - 1944-799X
pISSN - 0048-6604
DOI - 10.1029/2020rs007254
Subject(s) - microstrip , group delay and phase delay , resonator , electronic circuit , bandwidth (computing) , microwave , topology (electrical circuits) , dielectric resonator , physics , equivalent circuit , electronic engineering , electrical engineering , telecommunications , computer science , optoelectronics , engineering , voltage
This study investigates an innovative theory on design of dielectric resonator (DR) based negative group delay (NGD) microwave circuit. The NGD circuit is mainly constituted by a cylindrical bulk of DR as a coupling element with a microstrip line. The developed theory is analytically established from the S‐parameters modeling of this innovative DR NGD topology. The NGD analysis and synthesis equations are formulated by considering the key parameters of the DR NGD cell. The NGD existence condition as a function of the DR and microstrip line parameters is also introduced. The behavioral response of the bandpass NGD function is verified with different designed proof‐of‐concepts (POCs). The developed NGD DR topology was validated with original circuit design by commercial simulations and experimentations with insertion and reflection losses lower than 4 and 10 dB, respectively. The POC prototypes operate with low attenuation losses in mono band and dual bands up to 10 GHz. Single NGD cells with DR coupled with “I” and “U” shape microstrip lines operating at different central frequencies were designed and implemented. Then, dual‐band NGD circuits operating at approximately 2.5 and 5 GHz were also tested. The possibility to widen the NGD bandwidth with double DR NGD circuits was investigated.