Electronic Transport Properties of Epitaxial Si/SiGe Heterostructures Grown on Single-Crystal SiGe Nanomembranes | Zendy

Yize Stephanie Li | Zendy; Pornsatit Sookchoo | Zendy; Xiaorui Cui | Zendy; Robert Mohr | Zendy; D. E. Savage | Zendy; Ryan H. Foote | Zendy; RB Jacobson | Zendy; Jose Sanchez-Perez | Zendy; Deborah M. Paskiewicz | Zendy; Xian Wu | Zendy; Daniel R. Ward | Zendy; S. N. Coppersmith | Zendy; M. A. Eriksson | Zendy; M. G. Lagally | Zendy

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Electronic Transport Properties of Epitaxial Si/SiGe Heterostructures Grown on Single-Crystal SiGe Nanomembranes

Author(s) -

Yize Stephanie Li,

Pornsatit Sookchoo,

Xiaorui Cui,

Robert Mohr,

D. E. Savage,

Ryan H. Foote,

RB Jacobson,

Jose Sanchez-Perez,

Deborah M. Paskiewicz,

Xian Wu,

Daniel R. Ward,

S. N. Coppersmith,

M. A. Eriksson,

M. G. Lagally

Publication year - 2015

Publication title -

acs nano

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.554

H-Index - 382

eISSN - 1936-086X

pISSN - 1936-0851

DOI - 10.1021/nn506475z

Subject(s) - heterojunction , materials science , electron mobility , optoelectronics , hall effect , epitaxy , scattering , condensed matter physics , quantum hall effect , crystal (programming language) , electron , nanotechnology , electrical resistivity and conductivity , optics , physics , layer (electronics) , quantum mechanics , computer science , programming language

To assess possible improvements in the electronic performance of two-dimensional electron gases (2DEGs) in silicon, SiGe/Si/SiGe heterostructures are grown on fully elastically relaxed single-crystal SiGe nanomembranes produced through a strain engineering approach. This procedure eliminates the formation of dislocations in the heterostructure. Top-gated Hall bar devices are fabricated to enable magnetoresistivity and Hall effect measurements. Both Shubnikov-de Haas oscillations and the quantum Hall effect are observed at low temperatures, demonstrating the formation of high-quality 2DEGs. Values of charge carrier mobility as a function of carrier density extracted from these measurements are at least as high or higher than those obtained from companion measurements made on heterostructures grown on conventional strain graded substrates. In all samples, impurity scattering appears to limit the mobility.

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