Open AccessExceptional Charge Transport Properties of Graphene on Germanium
Author(s) -
Francesca Cavallo,
Richard Rojas Delgado,
Michelle M. Kelly,
Jose Roberto Sanchez Perez,
Daniel P. Schroeder,
Huili Grace Xing,
M. A. Eriksson,
M. G. Lagally
Publication year - 2014
Publication title -
acs nano
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.554
H-Index - 382
eISSN - 1936-086X
pISSN - 1936-0851
DOI - 10.1021/nn503381m
Subject(s) - graphene , materials science , germanium , electron mobility , substrate (aquarium) , nanotechnology , charge (physics) , doping , charge carrier , graphene nanoribbons , optoelectronics , conductivity , chemical physics , condensed matter physics , silicon , chemistry , physics , oceanography , quantum mechanics , geology
The excellent charge transport properties of graphene suggest a wide range of application in analog electronics. While most practical devices will require that graphene be bonded to a substrate, such bonding generally degrades these transport properties. In contrast, when graphene is transferred to Ge(001) its conductivity is extremely high and the charge carrier mobility derived from the relevant transport measurements is, under some circumstances, higher than that of freestanding, edge-supported graphene. We measure a mobility of ∼ 5 × 10(5) cm(2) V(-1) s(-1) at 20 K, and ∼ 10(3) cm(2) V(-1) s(-1) at 300 K. These values are close to the theoretical limit for doped graphene. Carrier densities in the graphene are as high as 10(14) cm(-2) at 300 K.
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