Hard X-ray Detection Using a Single 100 nm Diameter Nanowire | Zendy

Jesper Wallentin | Zendy; Markus Osterhoff | Zendy; Robin N. Wilke | Zendy; KarlMagnus Persson | Zendy; LarsErik Wernersson | Zendy; Michael Sprung | Zendy; Tim Salditt | Zendy

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Hard X-ray Detection Using a Single 100 nm Diameter Nanowire

Author(s) -

Jesper Wallentin,

Markus Osterhoff,

Robin N. Wilke,

KarlMagnus Persson,

LarsErik Wernersson,

Michael Sprung,

Tim Salditt

Publication year - 2014

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/nl5040545

Subject(s) - nanowire , x ray , materials science , diffraction , absorption (acoustics) , resolution (logic) , conductance , optoelectronics , transistor , image resolution , optics , analytical chemistry (journal) , chemistry , physics , condensed matter physics , voltage , composite material , chromatography , quantum mechanics , artificial intelligence , computer science

Submicron sized sensors could allow higher resolution in X-ray imaging and diffraction measurements, which are ubiquitous for materials science and medicine. We present electrical measurements of a single 100 nm diameter InP nanowire transistor exposed to hard X-rays. The X-ray induced conductance is over 5 orders of magnitude larger than expected from reported data for X-ray absorption and carrier lifetimes. Time-resolved measurements show very long characteristic lifetimes on the order of seconds, tentatively attributed to long-lived traps, which give a strong amplification effect. As a proof of concept, we use the nanowire to directly image an X-ray nanofocus with submicron resolution.

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