Open AccessQuantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots
Author(s) -
Xiaoyin Xiao,
Arthur Fischer,
George T. Wang,
Ping Lu,
Daniel Koleske,
Michael E. Coltrin,
Jeremy B. Wright,
Sheng Liu,
Igal Brener,
Ganapathi Subramania,
Jeffrey Y. Tsao
Publication year - 2014
Publication title -
nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.853
H-Index - 488
eISSN - 1530-6992
pISSN - 1530-6984
DOI - 10.1021/nl502151k
Subject(s) - photoluminescence , photoexcitation , quantum dot , optoelectronics , materials science , epitaxy , fabrication , wavelength , semiconductor , etching (microfabrication) , molecular beam epitaxy , nanotechnology , physics , excited state , medicine , alternative medicine , layer (electronics) , pathology , nuclear physics
We demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. We show that quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and that the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength. Low-temperature photoluminescence from ensembles of such QDs have peak wavelengths that can be tunably blue shifted by 35 nm (from 440 to 405 nm) and have line widths that narrow by 3 times (from 19 to 6 nm).
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