Open AccessActivation of Metal–Organic Precursors by Electron Bombardment in the Gas Phase for Enhanced Deposition of Solid Films
Author(s) -
Huaxing Sun,
Xiangdong Qin,
Francisco Zaera
Publication year - 2012
Publication title -
the journal of physical chemistry letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.563
H-Index - 203
ISSN - 1948-7185
DOI - 10.1021/jz3011332
Subject(s) - x ray photoelectron spectroscopy , atomic layer deposition , silicon , metal , deposition (geology) , oxide , adsorption , electron ionization , wafer , chemistry , analytical chemistry (journal) , chemical engineering , inorganic chemistry , silicon oxide , layer (electronics) , materials science , ion , nanotechnology , ionization , organic chemistry , paleontology , sediment , engineering , biology , silicon nitride
The incorporation of gas-phase electron-impact ionization and activation of metal-organic compounds into atomic layer deposition (ALD) processes is reported as a way to enhance film growth with stable precursors. Specifically, it is shown here that gas-phase activation of methylcyclopentadienylmanganese tricarbonyl, MeCpMn(CO)3, which was accomplished by using a typical nude ion gauge employed in many ultrahigh-vacuum (UHV) studies, enhances its dissociative adsorption on silicon surfaces, affording the design of ALD cycles with more extensive Mn deposition and at lower temperatures. Significantly higher Mn uptakes were demonstrated by X-ray photoelectron spectroscopy (XPS) on both silicon dioxide films and on Si(100) wafers Ar(+)-sputtered to remove their native oxide layer. The effectiveness of this electron-impact activation approach in ALD is explained in terms of the cracking patterns seen in mass spectrometry for the metal-organic precursor used.