Ba2Si3P6: 1D Nonlinear Optical Material with Thermal Barrier Chains
Author(s) -
Justin Mark,
Jian Wang,
Kui Wu,
Jeane Gladys Lo,
Shan Lee,
Kirill Kovnir
Publication year - 2019
Publication title -
journal of the american chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 7.115
H-Index - 612
eISSN - 1520-5126
pISSN - 0002-7863
DOI - 10.1021/jacs.9b04653
Subject(s) - chemistry , crystallography , band gap , crystal structure , covalent bond , tetrahedron , dangling bond , differential scanning calorimetry , silicon , second harmonic generation , crystal (programming language) , laser , optoelectronics , optics , materials science , programming language , physics , organic chemistry , computer science , thermodynamics
A novel barium silicon phosphide was synthesized and characterized. Ba 2 Si 3 P 6 crystallizes in the noncentrosymmetric space group Pna 2 1 (No. 33) and exhibits a unique bonding connectivity in the Si-P polyanion not found in other compounds. The crystal structure is composed of SiP 4 etrahedra connected into one-dimensional double-tetrahedra chains through corner sharing, edge sharing, and covalent P-P bonds. Chains are surrounded by Ba cations to achieve an electron balance. The novel compound exhibits semiconducting properties with a calculated bandgap of 1.6 eV and experimental optical bandgap of 1.88 eV. The complex pseudo-one-dimensional structure manifests itself in the transport and optical properties of Ba 2 Si 3 P 6 , demonstrating ultralow thermal conductivity (0.56 W m -1 K -1 at 300 K), promising second harmonic generation signal (0.9 × AgGaS 2 ), as well as high laser damage threshold (1.6 × AgGaS 2 , 48.5 MW/cm 2 ) when compared to the benchmark material AgGaS 2 . Differential scanning calorimetry reveals that Ba 2 Si 3 P 6 melts congruently at 1373 K, suggesting that large single crystal growth may be possible.
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