Epitaxial Ternary Nitride Thin Films Prepared by a Chemical Solution Method | Zendy

Hongmei Luo | Zendy; Haiyan Wang | Zendy; Zhenxing Bi | Zendy; David Feldmann | Zendy; Yongqiang Wang | Zendy; Anthony K. Burrell | Zendy; T. Mark McCleskey | Zendy; Eve Bauer | Zendy; Marilyn E. Hawley | Zendy; Q. X. Jia | Zendy

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Epitaxial Ternary Nitride Thin Films Prepared by a Chemical Solution Method

Author(s) -

Hongmei Luo,

Haiyan Wang,

Zhenxing Bi,

David Feldmann,

Yongqiang Wang,

Anthony K. Burrell,

T. Mark McCleskey,

Eve Bauer,

Marilyn E. Hawley,

Q. X. Jia

Publication year - 2008

Publication title -

journal of the american chemical society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 7.115

H-Index - 612

eISSN - 1520-5126

pISSN - 0002-7863

DOI - 10.1021/ja803544c

Subject(s) - ternary operation , epitaxy , chemistry , nitride , thin film , tetragonal crystal system , chemical engineering , chemical vapor deposition , polymer , nanotechnology , crystallography , organic chemistry , crystal structure , materials science , layer (electronics) , computer science , engineering , programming language

It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

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