Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF2: Enhanced Reaction Rate and Precursor Transport | Zendy

J.-H. Noh | Zendy; Jason D. Fowlkes | Zendy; Rajendra Timilsina | Zendy; Michael G. Stanford | Zendy; Brett B. Lewis | Zendy; Philip D. Rack | Zendy

Open Access

Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF₂: Enhanced Reaction Rate and Precursor Transport

Author(s) -

J.-H. Noh,

Jason D. Fowlkes,

Rajendra Timilsina,

Michael G. Stanford,

Brett B. Lewis,

Philip D. Rack

Publication year - 2015

Publication title -

acs applied materials and interfaces

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.535

H-Index - 228

eISSN - 1944-8252

pISSN - 1944-8244

DOI - 10.1021/am508443s

Subject(s) - materials science , etching (microfabrication) , titanium , nanolithography , scanning electron microscope , laser , cathode ray , desorption , electron , nanotechnology , optoelectronics , analytical chemistry (journal) , optics , fabrication , composite material , chemistry , medicine , alternative medicine , physics , layer (electronics) , pathology , quantum mechanics , adsorption , chromatography , metallurgy , organic chemistry

In order to enhance the etch rate of electron-beam-induced etching, we introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. The evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. The increased etch rate is attributed to photothermally enhanced Ti-F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.

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