Open AccessSelf-Running Ga Droplets on GaAs (111)A and (111)B Surfaces
Author(s) -
Songphol Kanjanachuchai,
Chanan Euaruksakul
Publication year - 2013
Publication title -
acs applied materials and interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.535
H-Index - 228
eISSN - 1944-8252
pISSN - 1944-8244
DOI - 10.1021/am402455u
Subject(s) - materials science , dislocation , semiconductor , surface (topology) , etching (microfabrication) , crystallography , plane (geometry) , crystal (programming language) , nanotechnology , isotropic etching , condensed matter physics , optoelectronics , geometry , composite material , chemistry , mathematics , physics , layer (electronics) , computer science , programming language
Thermal decomposition of GaAs (111)A and (111)B surfaces in ultrahigh vacuum results in self-running Ga droplets. Although Ga droplets on the (111)B surface run in one main direction, those on the (111)A surface run in multiple directions, frequently taking sharp turns and swerving around pyramidal etch pits, leaving behind mixed smooth-triangular trails as a result of simultaneous in-plane driving and out-of-plane crystallographic etching. The droplet motion is partially guided by dislocation strain fields. The results hint at the possibilities of using subsurface dislocation network and prepatterned, etched surfaces to control metallic droplet motion on single-crystal semiconductor surfaces.