Open AccessReversible Tuning of Ferromagnetism and Resistive Switching in ZnO/Cu Thin Films
Author(s) -
Muhammad Younas,
Chi Xu,
Muhammad Arshad,
Lok-Ping Ho,
Shengqiang Zhou,
Fahad Azad,
Muhammad Javed Akhtar,
Shichen Su,
Waqar Azeem,
C. C. Ling
Publication year - 2017
Publication title -
acs omega
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.779
H-Index - 40
ISSN - 2470-1343
DOI - 10.1021/acsomega.7b01192
Subject(s) - magnetic moment , ferromagnetism , x ray photoelectron spectroscopy , materials science , sapphire , ion , acceptor , pulsed laser deposition , condensed matter physics , coupling (piping) , inductive coupling , electron , fermi level , chemistry , thin film , nuclear magnetic resonance , laser , nanotechnology , physics , optics , organic chemistry , quantum mechanics , metallurgy
Systematic magnetic, electronic, and electrical studies on the Cu 0.04 Zn 0.96 O/Ga 0.01 Zn 0.99 O cell structure grown on (001) sapphire by the pulsed laser deposition technique show that the Cu multivalent (Cu M+ ) ions modulate magnetic and resistive states of the cells. The magnetic moment is found to be reduced by ∼30% during the high resistance state (HRS) to low resistance state (LRS) switching. X-ray photoelectron spectroscopy results reveals an increase of the Cu + /Cu 2+ oxidation state ratio (which has been determined by the relative positions of the Fermi level and the Cu acceptor level) during the HRS to LRS transition. This decreases the effective spin-polarized Cu 2+ -V ö -Cu + channels and thus the magnetic moment. A conduction mechanism involving the formation of conductive filaments from the coupling of the Cu M+ ions and V ö has been suggested.
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