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Impact of Doping on GO: Fast Response–Recovery Humidity Sensor
Author(s) -
K. S. Rathi,
Kaushik Pal
Publication year - 2017
Publication title -
acs omega
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.779
H-Index - 40
ISSN - 2470-1343
DOI - 10.1021/acsomega.6b00399
Subject(s) - humidity , materials science , doping , repeatability , graphene , oxide , relative humidity , optoelectronics , response time , sensitivity (control systems) , thin film , nanotechnology , computer science , electronic engineering , chemistry , meteorology , chromatography , engineering , physics , computer graphics (images) , metallurgy
Nowadays, humidity sensors have become essential in numerous applications. However, there are several problems while using them for humidity detection, such as low sensitivity, delayed response and recovery times, less stability, and narrow humidity detection ranges. Here, we demonstrate for the first time a highly sensitive chemiresistive sensor for low-level humidity detection in ambient atmosphere by introducing graphene oxide (GO) and doped GO (Li-doped GO and B-doped GO) as a thin film in a facile manner. The sensitivity, repeatability, and stability studies show that thin film-based fabricated humidity sensors are unprecedently efficient in the detection of different percentages of humidity from 11 to 97% at room temperature. The incorporation of doping into GO induces a dramatic change in the sensing behavior of the base film (undoped GO). This allows the sensor to be used in a variety of applications such as humidity sensing, which we validate through our experiment with a "cheap and readily available" recognition system.

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