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Characteristics of Vertical Ga2O3 Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film
Author(s) -
R. Venkata Krishna Rao,
Ajinkya K. Ranade,
Pradeep Desai,
Bhagyashri Todankar,
Golap Kalita,
Hiroo Suzuki,
Masaki Tanemura,
Yasuhiko Hayashi
Publication year - 2022
Publication title -
acs omega
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.779
H-Index - 40
ISSN - 2470-1343
DOI - 10.1021/acsomega.2c00506
Subject(s) - schottky barrier , materials science , schottky diode , optoelectronics , metal–semiconductor junction , heterojunction , layer (electronics) , substrate (aquarium) , gallium nitride , epitaxy , electrical junction , nanotechnology , oceanography , diode , geology

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