Open AccessHigh-Performance Photodetectors Based on MoTe2–MoS2 van der Waals Heterostructures
Author(s) -
Jianhua Xuan,
Zongqi Bai,
Fang Luo,
Mengjian Zhu,
Chucai Guo,
Zhihong Zhu,
Shiqiao Qin
Publication year - 2022
Publication title -
acs omega
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.779
H-Index - 40
ISSN - 2470-1343
DOI - 10.1021/acsomega.1c06009
Subject(s) - photodetector , heterojunction , photocurrent , van der waals force , optoelectronics , materials science , photodiode , nanoelectronics , exfoliation joint , nanotechnology , graphene , physics , quantum mechanics , molecule
Two-dimensional (2D) materials have got extensive attention for multifunctional device applications in advanced nanoelectronics and optoelectronics, such as field-effect transistors, photodiodes, and solar cells. In our work, we fabricated MoTe 2 -MoS 2 van der Waals heterostructure photodetectors with great performance using the mechanical exfoliation method and restack technique. It is demonstrated that our MoTe 2 -MoS 2 heterostructure photodetector device can operate without bias voltage, possessing a low dark current (10 pA) and high photocurrent on/off ratio (>10 4 ). Importantly, the room temperature photoresponsivity of the MoTe 2 -MoS 2 photodetector can reach 110.6 and 9.2 mA W -1 under λ = 532 and 1064 nm incident laser powers, respectively. Our results indicate that the van der Waals heterostructure based on 2D semiconducting materials is expected to play an important role in nanoscale optoelectronic applications.