Open AccessSelective Chemistry-Based Separation of Semiconducting Single-Walled Carbon Nanotubes and Alignment of the Nanotube Array Network under Electric Field for Field-Effect Transistor Applications
Author(s) -
T. H. Vignesh Kumar,
Jerome Rajendran,
Ramila D. Nagarajan,
Gayathri Jeevanandam,
A. N. Reshetilov,
Ashok K. Sundramoorthy
Publication year - 2021
Publication title -
acs omega
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.779
H-Index - 40
ISSN - 2470-1343
DOI - 10.1021/acsomega.0c04607
Subject(s) - carbon nanotube , materials science , field effect transistor , raman spectroscopy , nanotube , nanotechnology , silicon , field electron emission , optoelectronics , chemical engineering , transistor , optics , quantum mechanics , voltage , physics , engineering , electron
Semiconducting single-walled carbon nanotubes (s-SWCNTs) are considered as a replacement for silicon in field-effect transistors (FETs), solar cells, logic circuits, and so forth, because of their outstanding electronic, optical, and mechanical properties. Herein, we have studied the reaction of pristine SWCNTs dispersed in a pluronic F-68 (PF-68) polymer solution with para-amino diphenylamine diazonium sulfate (PADDS) to separate nanotubes based on their metallicity. The preferential selectivity of the reactions was monitored by changes in the semiconducting (S 22 and S 33 ) and metallic (M 11 ) bands by ultraviolet-visible-near infrared spectroscopy. Metallic selectivity depended on the concentrations of PADDS, reaction time, and the solution pH. Furthermore, separation of pure s-SWCNTs was confirmed by Raman spectroscopy and Fourier-transform infrared spectroscopy. After the removal of metallic SWCNTs, direct current electric field was applied to the pure s-SWCNT solution, which effectively directed the nanotubes to align in one direction as nanotube arrays with a longer length and high density. After that, electrically aligned s-SWCNT solution was cast on a silicon substrate, and the length of the nanotube arrays was measured as ∼2 to ∼14 μm with an areal density of ∼2 to ∼20 tubes/μm of s-SWCNTs. Next, electrically aligned s-SWCNT arrays were deposited on the channel of the FET device by drop-casting. Field-emission scanning electron microscopy and electrical measurements have been carried out to test the performance of the aligned s-SWCNTs/FETs. The fabricated FETs with a channel length of 10 μm showed stable electrical properties with a field-effect mobility of 30.4 cm 2 /Vs and a log 10 ( I on / I off ) current ratio of 3.96. We envisage that this new chemical-based separation method and electric field-assisted alignment could be useful to obtain a high-purity and aligned s-SWCNT array network for the fabrication of high-performance FETs to use in digital and analog electronics.