Ultrafast Exciton Trapping at sp3 Quantum Defects in Carbon Nanotubes

Semiconducting single-walled carbon nanotubes (SWCNTs) constitute an ideal platform for developing near-infrared biosensors, single photon sources, and nanolasers due to their distinct optical and electrical properties. Covalent doping of SWCNTs has recently been discovered as an efficient approach in enhancing their emission intensities. We perform pump-probe studies of SWCNTs that are covalently doped with sp 3 quantum defects and reveal strikingly different exciton formation dynamics and decay mechanisms in the presence of the defect sites. We show that, in highly doped SWCNTs, ultrafast trapping of excitons at the defect sites can outpace other photodynamic processes and lead to ground-state photobleaching of the quantum defects. Our fitting of the transient data with a kinetic model also reveals an upper limit in the quantum defect density for obtaining highly luminescent SWCNTs without causing irreversible damage. These findings not only deepen our understanding of the photodynamics in covalently doped SWCNTs but also reveal critical information for the design of bright near-infrared emitters that can be utilized in biological, quantum information, and nanophotonic applications.