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Defect Engineering in Solution-Processed Polycrystalline SnSe Leads to High Thermoelectric Performance
Author(s) -
Yu Liu,
Mariano Calcabrini,
Yuan Yu,
Seungho Lee,
Cheng Chang,
Jérémy David,
Tanmoy Ghosh,
María Chiara Spadaro,
Chenyang Xie,
Oana CojocaruMirédin,
Jordi Arbiol,
María Ibáñez
Publication year - 2021
Publication title -
acs nano
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.554
H-Index - 382
eISSN - 1936-086X
pISSN - 1936-0851
DOI - 10.1021/acsnano.1c06720
Subject(s) - materials science , thermoelectric effect , crystallite , thermoelectric materials , grain boundary , thermal conductivity , nanotechnology , nanoparticle , nanocomposite , sintering , figure of merit , single crystal , grain growth , grain size , optoelectronics , composite material , metallurgy , crystallography , microstructure , physics , chemistry , thermodynamics
SnSe has emerged as one of the most promising materials for thermoelectric energy conversion due to its extraordinary performance in its single-crystal form and its low-cost constituent elements. However, to achieve an economic impact, the polycrystalline counterpart needs to replicate the performance of the single crystal. Herein, we optimize the thermoelectric performance of polycrystalline SnSe produced by consolidating solution-processed and surface-engineered SnSe particles. In particular, the SnSe particles are coated with CdSe molecular complexes that crystallize during the sintering process, forming CdSe nanoparticles. The presence of CdSe nanoparticles inhibits SnSe grain growth during the consolidation step due to Zener pinning, yielding a material with a high density of grain boundaries. Moreover, the resulting SnSe-CdSe nanocomposites present a large number of defects at different length scales, which significantly reduce the thermal conductivity. The produced SnSe-CdSe nanocomposites exhibit thermoelectric figures of merit up to 2.2 at 786 K, which is among the highest reported for solution-processed SnSe.

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