Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis | Zendy

Bhaswar Chakrabarti | Zendy; Henry Chan | Zendy; Khan Alam | Zendy; Aditya Koneru | Zendy; Thomas E. Gage | Zendy; Leonidas E. Ocola | Zendy; Ralu Divan | Zendy; Daniel Rosenmann | Zendy; Abhishek Khanna | Zendy; Benjamin Grisafe | Zendy; Toby Sanders | Zendy; Suman Datta | Zendy; Ilke Arslan | Zendy; Subramanian K. R. S. Sankaranarayan | Zendy; Supratik Guha | Zendy

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Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis

Author(s) -

Bhaswar Chakrabarti,

Henry Chan,

Khan Alam,

Aditya Koneru,

Thomas E. Gage,

Leonidas E. Ocola,

Ralu Divan,

Daniel Rosenmann,

Abhishek Khanna,

Benjamin Grisafe,

Toby Sanders,

Suman Datta,

Ilke Arslan,

Subramanian K. R. S. Sankaranarayan,

Supratik Guha

Publication year - 2021

Publication title -

acs nano

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 5.554

H-Index - 382

eISSN - 1936-086X

pISSN - 1936-0851

DOI - 10.1021/acsnano.0c03201

Subject(s) - materials science , nanoporous , atomic layer deposition , neuromorphic engineering , dielectric , optoelectronics , nanotechnology , resistive random access memory , non volatile memory , leakage (economics) , voltage , thin film , computer science , electrical engineering , engineering , machine learning , artificial neural network , economics , macroeconomics

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