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Cesium lead halide perovskite nanocrystals (NCs) have unique optical properties such as high color purity and high photoluminescence (PL) efficiency. However, the external quantum efficiency (EQE) of the corresponding light-emitting diodes (LEDs) is low, primarily as a result of the NC surface defects. Here, we report a method to reduce the surface defects by capping CsPbI 3 NCs with PbS. This passivation significantly enhanced the PL efficiency, reduced the Stokes shift, narrowed the PL bandwidth, and increased the stability of CsPbI 3 NCs. At the same time, CsPbI 3 NC films switched from n -type behavior to nearly ambipolar by PbS capping, which allowed us to fabricate electroluminescence LEDs using p - i - n structures. The thus-fabricated LEDs exhibited dramatically improved storage and operation stability, and an EQE of 11.8%. These results suggest that, with a suitable surface passivation strategy, the perovskite NCs are promising for next-generation LED and display applications.

PbS Capped CsPbI3 Nanocrystals for Efficient and Stable Light-Emitting Devices Using p–i–n Structures

PbS Capped CsPbI₃ Nanocrystals for Efficient and Stable Light-Emitting Devices Using p–i–n Structures