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Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States
Author(s) -
Shelley A. Scott,
Christoph Deneke,
Deborah M. Paskiewicz,
Hyuk Ju Ryu,
Ângelo Malachias,
S. Baunack,
Oliver G. Schmidt,
D. E. Savage,
M. A. Eriksson,
M. G. Lagally
Publication year - 2017
Publication title -
acs applied materials and interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.535
H-Index - 228
eISSN - 1944-8252
pISSN - 1944-8244
DOI - 10.1021/acsami.7b14291
Subject(s) - materials science , silicon , planar , substrate (aquarium) , semiconductor , epitaxy , characterization (materials science) , optoelectronics , nanotechnology , crystal (programming language) , strain (injury) , computer graphics (images) , layer (electronics) , computer science , medicine , programming language , geology , oceanography
Methods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. We combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar arrays of different orientations and strain states of Si in a single membrane, which is then readily transferable to other substrates, including flexible supports. As examples, regions of Si(001) and Si(110) or strained Si(110) are combined to form a multicomponent, single substrate with high-quality narrow interfaces. We perform extensive structural characterization of all interfaces and measure charge-carrier mobilities in different regions of a 2D quilt. The method is readily extendable to include varying compositions or different classes of materials.

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