Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition | Zendy

Cheng-Yin Wang | Zendy; Canek Fuentes-Hernández | Zendy; Minseong Yun | Zendy; Ankit Kumar Singh | Zendy; Amir Dindar | Zendy; Sangmoo Choi | Zendy; Samuel Graham | Zendy; Bernard Kippelen | Zendy

Open Access

Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

Author(s) -

Cheng-Yin Wang,

Canek Fuentes-Hernández,

Minseong Yun,

Ankit Kumar Singh,

Amir Dindar,

Sangmoo Choi,

Samuel Graham,

Bernard Kippelen

Publication year - 2016

Publication title -

acs applied materials and interfaces

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.535

H-Index - 228

eISSN - 1944-8252

pISSN - 1944-8244

DOI - 10.1021/acsami.6b10603

Subject(s) - materials science , atomic layer deposition , bilayer , layer (electronics) , field effect transistor , optoelectronics , dielectric , deposition (geology) , gate dielectric , nanotechnology , thin film transistor , oxide , high κ dielectric , transistor , voltage , metallurgy , electrical engineering , paleontology , engineering , membrane , sediment , biology , genetics

We report on top-gate OFETs with a bilayer gate dielectric comprising an Al 2 O 3 /HfO 2 nanolaminate layer grown by atomic layer deposition and an amorphous fluoro-polymer layer (CYTOP). Top-gate OFETs display average carrier mobility values of 0.9 ± 0.2 cm 2 /(V s) and threshold voltage values of -1.9 ± 0.5 V and high operational and environmental stability under different environmental conditions such as damp air at 50 °C (80% relative humidity) and prolonged immersion in water at a temperature up to 95 °C.

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