Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors | Zendy

Marios Constantinou | Zendy; Vlad Stolojan | Zendy; Kiron Prabha Rajeev | Zendy; Steven J. Hinder | Zendy; Brett Fisher | Zendy; Timothy D. Bogart | Zendy; Brian A. Korgel | Zendy; Maxim Shkunov | Zendy

Open Access

Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors

Author(s) -

Marios Constantinou,

Vlad Stolojan,

Kiron Prabha Rajeev,

Steven J. Hinder,

Brett Fisher,

Timothy D. Bogart,

Brian A. Korgel,

Maxim Shkunov

Publication year - 2015

Publication title -

acs applied materials and interfaces

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.535

H-Index - 228

eISSN - 1944-8252

pISSN - 1944-8244

DOI - 10.1021/acsami.5b07140

Subject(s) - materials science , passivation , nanowire , hysteresis , x ray photoelectron spectroscopy , oxidizing agent , analytical chemistry (journal) , transistor , field effect transistor , stoichiometry , optoelectronics , nanotechnology , chemical engineering , layer (electronics) , chemistry , condensed matter physics , voltage , physics , engineering , organic chemistry , chromatography , quantum mechanics

In this letter, we demonstrate a solution-based method for a one-step deposition and surface passivation of the as-grown silicon nanowires (Si NWs). Using N,N-dimethylformamide (DMF) as a mild oxidizing agent, the NWs' surface traps density was reduced by over 2 orders of magnitude from 1×10(13) cm(-2) in pristine NWs to 3.7×10(10) cm(-2) in DMF-treated NWs, leading to a dramatic hysteresis reduction in NW field-effect transistors (FETs) from up to 32 V to a near-zero hysteresis. The change of the polyphenylsilane NW shell stoichiometric composition was confirmed by X-ray photoelectron spectroscopy analysis showing a 35% increase in fully oxidized Si4+ species for DMF-treated NWs compared to dry NW powder. Additionally, a shell oxidation effect induced by DMF resulted is a more stable NW FET performance with steady transistor currents and only 1.5 V hysteresis after 1000 h of air exposure.

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