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In this work, we report the impact of substrate type on the morphological and structural properties of molybdenum disulfide (MoS 2 ) grown by chemical vapor deposition (CVD). MoS 2 synthesized on a three-dimensional (3D) substrate, that is, SiO 2 , in response to the change of the thermodynamic conditions yielded different grain morphologies, including triangles, truncated triangles, and circles. Simultaneously, MoS 2 on graphene is highly immune to the modifications of the growth conditions, forming triangular crystals only. We explain the differences between MoS 2 on SiO 2 and graphene by the different surface diffusion mechanisms, namely, hopping and gas-molecule-collision-like mechanisms, respectively. As a result, we observe the formation of thermodynamically favorable nuclei shapes on graphene, while on SiO 2 , a full spectrum of domain shapes can be achieved. Additionally, graphene withstands the growth process well, with only slight changes in strain and doping. Furthermore, by the application of graphene as a growth substrate, we realize van der Waals epitaxy and achieve strain-free growth, as suggested by the photoluminescence (PL) studies. We indicate that PL, contrary to Raman spectroscopy, enables us to arbitrarily determine the strain levels in MoS 2 .

acs applied materials and interfaces

Substrate-Induced Variances in Morphological and Structural Properties of MoS<sub>2</sub> Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO<sub>2</sub>

Substrate-Induced Variances in Morphological and Structural Properties of MoS2 Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO2

Substrate-Induced Variances in Morphological and Structural Properties of MoS₂ Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO₂