Open AccessDirect Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth
Author(s) -
Yuefei Cai,
Jack I. H. Haggar,
Chenqi Zhu,
Feng Peng,
Jie Bai,
Tao Wang
Publication year - 2021
Publication title -
acs applied electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.379
H-Index - 4
ISSN - 2637-6113
DOI - 10.1021/acsaelm.0c00985
Subject(s) - high electron mobility transistor , optoelectronics , materials science , light emitting diode , epitaxy , gallium nitride , diode , etching (microfabrication) , transistor , dry etching , wide bandgap semiconductor , electrical engineering , voltage , nanotechnology , engineering , layer (electronics)
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