Open AccessEffect of the Gate Volume on the Performance of Printed Nanosheet Network-Based Transistors
Author(s) -
Domhnall O’Suilleabhain,
Adam G. Kelly,
Ruiyuan Tian,
Cian Gabbett,
Dominik Horváth,
Jonathan N. Coleman
Publication year - 2020
Publication title -
acs applied electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.379
H-Index - 4
ISSN - 2637-6113
DOI - 10.1021/acsaelm.0c00368
Subject(s) - nanosheet , materials science , transistor , optoelectronics , electrode , thin film transistor , printed electronics , channel (broadcasting) , volume (thermodynamics) , electrolyte , electronics , flexible electronics , logic gate , nanotechnology , electrical engineering , electronic engineering , inkwell , voltage , layer (electronics) , engineering , composite material , chemistry , physics , quantum mechanics
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