Open AccessEpitaxial Formation of SiC on (100) Diamond
Author(s) -
A. Tsai,
Alireza Aghajamali,
Nikolai Dontschuk,
Brett C. Johnson,
Muhammad Usman,
Alex K. Schenk,
Michael J. Sear,
C. I. Pakes,
Lloyd C. L. Hollenberg,
Jeffrey C. McCallum,
Sergey Rubanov,
Anton Tadich,
Nigel A. Marks,
Alastair Stacey
Publication year - 2020
Publication title -
acs applied electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.379
H-Index - 4
ISSN - 2637-6113
DOI - 10.1021/acsaelm.0c00289
Subject(s) - diamond , materials science , epitaxy , silicon carbide , heterojunction , lattice (music) , transmission electron microscopy , condensed matter physics , material properties of diamond , crystallographic defect , optoelectronics , high resolution transmission electron microscopy , nanotechnology , composite material , physics , layer (electronics) , acoustics
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