Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes | Zendy

Philipp Staudinger | Zendy; Svenja Mauthe | Zendy; Kirsten E. Moselund | Zendy; Heinz Schmid | Zendy

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Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes

Author(s) -

Philipp Staudinger,

Svenja Mauthe,

Kirsten E. Moselund,

Heinz Schmid

Publication year - 2018

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/acs.nanolett.8b03632

Subject(s) - wurtzite crystal structure , materials science , planar , nanowire , semiconductor , phase (matter) , band gap , epitaxy , optoelectronics , crystal growth , crystallography , crystal structure , nanotechnology , crystal (programming language) , template , zinc , characterization (materials science) , chemistry , computer graphics (images) , organic chemistry , layer (electronics) , computer science , programming language , metallurgy

Recent research on nanowires (NWs) demonstrated the ability of III-V semiconductors to adopt a different crystallographic phase when they are grown as nanostructures, giving rise to a novel class of materials with unique properties. Controlling the crystal structure however remains difficult and the geometrical constraints of NWs cause integration challenges for advanced devices. Here, we report for the first time on the phase-controlled growth of micron-sized planar InP films by selecting confined growth planes during template-assisted selective epitaxy. We demonstrate this by varying the orientation of predefined templates, which results in concurrent formation of zinc-blende (ZB) and wurtzite (WZ) material exhibiting phase purities of 100% and 97%, respectively. Optical characterization revealed a 70 meV higher band gap and a 2.5× lower lifetime for WZ InP in comparison to its natural ZB phase. Further, a model for the transition of the crystal structure is presented based on the observed growth facets and the bonding configuration of InP surfaces.

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