Open AccessLow-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing
Author(s) -
Lasse Södergren,
Patrik Olausson,
Erik Lind
Publication year - 2022
Publication title -
nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.853
H-Index - 488
eISSN - 1530-6992
pISSN - 1530-6984
DOI - 10.1021/acs.nanolett.1c04971
Subject(s) - qubit , biasing , nanowire , optoelectronics , scaling , subthreshold conduction , condensed matter physics , materials science , physics , quantum , transistor , voltage , quantum mechanics , geometry , mathematics
In current quantum computers, most qubit control electronics are connected to the qubit chip inside the cryostat by cables at room temperature. This poses a challenge when scaling the quantum chip to an increasing number of qubits. We present a lateral nanowire network 1-to-4 demultiplexer design fabricated by selective area grown InGaAs on InP, suitable for on chip routing of DC current for qubit biasing. We have characterized the device at cryogenic temperatures, and at 40 mK the device exhibits a minimum inverse subthreshold slope of 2 mV/dec, which is encouraging for low power operation. At low drain bias, the transmission breaks up into several resonance peaks due to a rough conduction band edge; this is qualitatively explained by a simple model based on a 1D real space tight-binding nonequilibrium Green's functions model.