Exceptional Radiation Absorption in a Pentagon-Based Si Allotrope
Author(s) -
Alejandro LópezBezanilla,
P. B. Littlewood
Publication year - 2021
Publication title -
nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.853
H-Index - 488
eISSN - 1530-6992
pISSN - 1530-6984
DOI - 10.1021/acs.nanolett.1c00549
Subject(s) - atomic orbital , band gap , materials science , molecular physics , covalent bond , absorption (acoustics) , radiation pressure , phase (matter) , absorption edge , chemical physics , optoelectronics , optics , chemistry , physics , electron , quantum mechanics , organic chemistry , composite material
Excellent photovoltaic performance is predicted in a pentagonal covalent network of Si in a hollow structure exhibiting both thermal and dynamical stability. Consisting of a combination of sp 2 and sp 3 hybridized Si atomic orbitals, the GW0 computed band structure shows an indirect band gap near the zone edge and also a manifold of directly absorbing transitions at frequencies in the window of visible light, in distinction with conventional Si. Hydrogenation of a single sp 2 site is predicted to lead to a robust local magnetic moment. We find a low formation energy at low pressure that is compatible with other experimentally known phases, suggesting that a stable phase might be obtained.
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