Possible Topological Hall Effect above Room Temperature in Layered Cr1.2Te2 Ferromagnet | Zendy

Meng Huang | Zendy; Lei Gao | Zendy; Ying Zhang | Zendy; Xunyong Lei | Zendy; Guojing Hu | Zendy; Junxiang Xiang | Zendy; Hualing Zeng | Zendy; Xuewen Fu | Zendy; Zengming Zhang | Zendy; Guozhi Chai | Zendy; Yong Peng | Zendy; Yalin Lu | Zendy; Haifeng Du | Zendy; Gong Chen | Zendy; Jiadong Zang | Zendy; Bin Xiang | Zendy

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Possible Topological Hall Effect above Room Temperature in Layered Cr_1.2Te₂ Ferromagnet

Author(s) -

Meng Huang,

Lei Gao,

Ying Zhang,

Xunyong Lei,

Guojing Hu,

Junxiang Xiang,

Hualing Zeng,

Xuewen Fu,

Zengming Zhang,

Guozhi Chai,

Yong Peng,

Yalin Lu,

Haifeng Du,

Gong Chen,

Jiadong Zang,

Bin Xiang

Publication year - 2021

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/acs.nanolett.1c00493

Subject(s) - spintronics , ferromagnetism , condensed matter physics , spin (aerodynamics) , chirality (physics) , spin hall effect , hall effect , materials science , spin canting , magnetic field , nanotechnology , physics , magnetization , spin polarization , symmetry breaking , quantum mechanics , electron , thermodynamics , chiral symmetry breaking , nambu–jona lasinio model

Topological Hall effect (THE) has been used as a powerful tool to unlock spin chirality in novel magnetic materials. Recent focus has been widely paid to THE and possible chiral spin textures in two-dimensional (2D) layered magnetic materials. However, the room-temperature THE has been barely reported in 2D materials, which hinders its practical applications in 2D spintronics. In this paper, we report a possible THE signal featuring antisymmetric peaks in a wide temperature window up to 320 K in Cr 1.2 Te 2 , a new quasi-2D ferromagnetic material. The temperature, thickness, and magnetic field dependences of the THE lead to potential spin chirality origin that is associated with the spin canting under external magnetic fields. Our work holds promise for practical applications in future chiral spin-based vdW spintronic devices.

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