Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors

The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1 nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here, we report a facile approach to synthesize a uniform high-k (ε r ∼ 22) amorphous native oxide Bi 2 SeO x on the high-mobility 2D semiconducting Bi 2 O 2 Se using O 2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ∼0.9 nm, while the original properties of underlying 2D Bi 2 O 2 Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi 2 O 2 Se is achieved to fabricate discrete electronic components. This facile integration of a high-mobility 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.