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Tunable Lattice Constant and Band Gap of Single- and Few-Layer ZnO
Author(s) -
Junseok Lee,
Dan C. Sorescu,
Xingyi Deng
Publication year - 2016
Publication title -
the journal of physical chemistry letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.563
H-Index - 203
ISSN - 1948-7185
DOI - 10.1021/acs.jpclett.6b00432
Subject(s) - lattice constant , condensed matter physics , constant (computer programming) , materials science , lattice (music) , band gap , layer (electronics) , wide bandgap semiconductor , optoelectronics , physics , optics , nanotechnology , computer science , acoustics , diffraction , programming language
Single and few-layer ZnO(0001) (ZnO(nL), n = 1-4) grown on Au(111) have been characterized via scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and density functional theory (DFT) calculations. We find that the in-plane lattice constants of the ZnO(nL, n ≤ 3) are expanded compared to that of the bulk wurtzite ZnO(0001). The lattice constant reaches a maximum expansion of 3% in the ZnO(2L) and decreases to the bulk wurtzite ZnO value in the ZnO(4L). The band gap decreases monotonically with increasing number of ZnO layers from 4.48 eV (ZnO(1L)) to 3.42 eV (ZnO(4L)). These results suggest that a transition from a planar to the bulk-like ZnO structure occurs around the thickness of ZnO(4L). The work also demonstrates that the lattice constant and the band gap in ultrathin ZnO can be tuned by controlling the number of layers, providing a basis for further investigation of this material.

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