Local Structure Properties of Hydrogenated and Nonhydrogenated Amorphous In–Ga–Zn–O Thin Films Using XAFS and High-Energy XRD
Author(s) -
L. S. R. Kumara,
Kyohei Ishikawa,
Keisuke Ide,
Hideo Hosono,
Toshio Kamiya,
Osami Sakata
Publication year - 2021
Publication title -
the journal of physical chemistry c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.401
H-Index - 289
eISSN - 1932-7455
pISSN - 1932-7447
DOI - 10.1021/acs.jpcc.1c02437
Subject(s) - x ray absorption fine structure , amorphous solid , materials science , impurity , sputtering , fermi level , electronic structure , thin film transistor , hydrogen , atomic units , thin film , analytical chemistry (journal) , reverse monte carlo , extended x ray absorption fine structure , absorption spectroscopy , atomic physics , spectroscopy , crystallography , chemistry , nanotechnology , crystal structure , optics , layer (electronics) , computational chemistry , neutron diffraction , physics , organic chemistry , quantum mechanics , chromatography , electron
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