Exclusive Substitutional Nitrogen Doping on Graphene Decoupled from an Insulating Substrate
Author(s) -
Juan Carlos MorenoLópez,
Filippo Fedi,
Giacomo Argentero,
Marco Carini,
Johnny Chimborazo,
Jannik C. Meyer,
Thomas Pichler,
Aurelio MateoAlonso,
Paola Ayala
Publication year - 2020
Publication title -
the journal of physical chemistry c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.401
H-Index - 289
eISSN - 1932-7455
pISSN - 1932-7447
DOI - 10.1021/acs.jpcc.0c06415
Subject(s) - graphene , substrate (aquarium) , materials science , doping , condensed matter physics , dispersion (optics) , nanotechnology , fermi level , chemical physics , optoelectronics , chemistry , physics , quantum mechanics , oceanography , geology , electron
The on-surface synthesis of atomically flat N-doped graphene on oxidized copper is presented. Besides circumventing the almost standard use of metallic substrates for growth, this method allows producing graphene with ∼2.0 at % N in a substitutional configuration directly decoupled from the substrate. Angle-resolved photoemission shows a linear energy-momentum dispersion where the Dirac point lies at the Fermi level. Additionally, the N functional centers can be selectively tailored in sp 2 substitutional configuration by making use of a purpose-made molecular precursor: dicyanopyrazophenanthroline (C 16 H 6 N 6 ).
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