Open AccessHybridization Gap in the Semiconducting Compound SrIr4In2Ge4
Author(s) -
Nicholas P. Calta,
Jino Im,
Leiming Fang,
Thomas C. Chasapis,
Daniel E. Bugaris,
Duck Young Chung,
W. K. Kwok,
Mercouri G. Kanatzidis
Publication year - 2016
Publication title -
inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 233
eISSN - 1520-510X
pISSN - 0020-1669
DOI - 10.1021/acs.inorgchem.6b02617
Subject(s) - chemistry , tetragonal crystal system , band gap , semiconductor , compound semiconductor , crystallography , direct and indirect band gaps , valence (chemistry) , crystal structure , valence electron , electron , condensed matter physics , optoelectronics , physics , epitaxy , organic chemistry , layer (electronics) , quantum mechanics
Large single crystals of SrIr 4 In 2 Ge 4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of E g = 0.25(3) eV. It crystallizes in the tetragonal EuIr 4 In 2 Ge 4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr 4 In 2 Ge 4 and the parent structure Ca 3 Ir 4 Ge 4 , suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.
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