Open AccessVacuum-Referred Binding Energies of Bismuth and Lanthanide Levels in ARE(Si,Ge)O4 (A = Li, Na; RE = Y, Lu): Toward Designing Charge-Carrier-Trapping Processes for Energy Storage
Author(s) -
Tianshuai Lyu,
P. Dorenbos
Publication year - 2020
Publication title -
chemistry of materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.741
H-Index - 375
eISSN - 1520-5002
pISSN - 0897-4756
DOI - 10.1021/acs.chemmater.9b04341
Subject(s) - phosphor , luminescence , photoluminescence , thermoluminescence , afterglow , materials science , bismuth , lanthanide , charge carrier , doping , analytical chemistry (journal) , optoelectronics , chemistry , ion , physics , gamma ray burst , organic chemistry , chromatography , astronomy , metallurgy
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom