Open AccessRole of Point Defects in Enhancing the Conductivity of BiVO4
Author(s) -
Hosung Seo,
Yuan Ping,
Giulia Galli
Publication year - 2018
Publication title -
chemistry of materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.741
H-Index - 375
eISSN - 1520-5002
pISSN - 0897-4756
DOI - 10.1021/acs.chemmater.8b03201
Subject(s) - bismuth vanadate , polaron , dopant , materials science , chemical physics , conductivity , charge carrier , crystallographic defect , band gap , doping , density functional theory , bismuth , hybrid functional , oxygen , condensed matter physics , nanotechnology , photocatalysis , computational chemistry , optoelectronics , chemistry , electron , physics , biochemistry , organic chemistry , quantum mechanics , metallurgy , catalysis
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom