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Evolution of Crystal Structure During the Initial Stages of ZnO Atomic Layer Deposition
Author(s) -
Raphaël Boichot,
Liang Tian,
MarieIngrid Richard,
Alexandre Crisci,
A. Chaker,
V. Cantelli,
S. Coindeau,
S. Lay,
T. Ouled,
C. Guichet,
Chu Manh Hung,
Nicolas Aubert,
G. Ciatto,
E. Blanquet,
Ο. Thomas,
JeanLuc Deschanvres,
Dillon D. Fong,
H. Renevier
Publication year - 2016
Publication title -
chemistry of materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.741
H-Index - 375
eISSN - 1520-5002
pISSN - 0897-4756
DOI - 10.1021/acs.chemmater.5b04223
Subject(s) - coalescence (physics) , materials science , synchrotron , silicon , atomic layer deposition , microstructure , chemical physics , deposition (geology) , crystal structure , oxide , layer (electronics) , crystallography , chemical engineering , nanotechnology , metallurgy , chemistry , optics , geology , paleontology , physics , engineering , sediment , astrobiology
International audienceA complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer deposition. Focusing on the first 10 cycles of growth, we observe that the structure formed during the coalescence stage largely determines the overall microstructure of the film. Furthermore, by comparing ZnO growth on silicon with a native oxide with that on Al2O3(001), we find that even with lattice-mismatched substrates and low deposition temperatures, the crystalline texture of the films is dependent strongly on the nature of the interfacial bonds

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