Open AccessWafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations
Author(s) -
Jawad UlHassan,
Robin Karhu,
Louise Lilja,
Erik Janzén
Publication year - 2019
Publication title -
crystal growth and design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.966
H-Index - 155
eISSN - 1528-7505
pISSN - 1528-7483
DOI - 10.1021/acs.cgd.9b00141
Subject(s) - wafer , growth rate , materials science , substrate (aquarium) , epitaxy , phase (matter) , optoelectronics , chemistry , crystallography , analytical chemistry (journal) , nanotechnology , geometry , geology , oceanography , mathematics , organic chemistry , layer (electronics) , chromatography
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