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Double etched porous silicon nanowire arrays for impedance sensing of influenza viruses
Author(s) -
M. B. Gongalsky,
Uliana A. Tsurikova,
J.V. Samsonova,
G.Z. Gvindzhiliiia,
K. A. Gonchar,
N. Yu. Saushkin,
A. A. KUDRYAVTSEV,
E. A. Kropotkina,
Alexandra Gambaryan,
Л. А. Осминкина
Publication year - 2020
Publication title -
results in materials
Language(s) - English
Resource type - Journals
ISSN - 2590-048X
DOI - 10.1016/j.rinma.2020.100084
Subject(s) - porous silicon , materials science , detection limit , silicon , electrical impedance , penetration (warfare) , silicon nanowires , optoelectronics , nanowire , spectrometer , porosity , adsorption , nanotechnology , optics , chemistry , composite material , chromatography , electrical engineering , physics , operations research , engineering , organic chemistry
We report new sensing element based on double-etched porous silicon (DEPSi) for sensitive detection of influenza viruses (H1N1). The proposed structure provided efficient penetration of virions into sensitive layer and trapping of them. Adsorption of the viruses led to significant shift of resonant frequency of DEPSi coupled with a coil, measured by impedance spectrometer. The detection limit of virions was lower than 100 TCID50. The results can be used for invention of H1N1 sensor, which provide rapid, label-free and low-cost detection of influenza.

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