Open AccessElectron paramagnetic resonance characterization of aluminum ion implantation-induced defects in 4H-SiC
Author(s) -
Xiuhong Wang,
Zongwei Xu,
Mathias Rommel,
Bing Dong,
Le Xin Song,
Clarence Augustine TH Tee,
Fengzhou Fang
Publication year - 2019
Publication title -
nanotechnology and precision engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.232
H-Index - 12
eISSN - 2589-5540
pISSN - 1672-6030
DOI - 10.1016/j.npe.2019.12.002
Subject(s) - electron paramagnetic resonance , materials science , annealing (glass) , silicon carbide , ion implantation , doping , aluminium , ion , silicon , vacancy defect , crystallographic defect , wide bandgap semiconductor , analytical chemistry (journal) , carbide , optoelectronics , nuclear magnetic resonance , crystallography , chemistry , composite material , physics , organic chemistry , chromatography
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