Open AccessElectron paramagnetic resonance characterization of aluminum ion implantation-induced defects in 4H-SiC
Author(s) -
Xiuhong Wang,
Zongwei Xu,
Mathias Rommel,
Bing Dong,
Le Xin Song,
Clarence Augustine TH Tee,
Fengzhou Fang
Publication year - 2019
Publication title -
nami jishu yu jingmi gongcheng/nanotechnology and precision engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.232
H-Index - 12
eISSN - 2589-5540
pISSN - 1672-6030
DOI - 10.1016/j.npe.2019.12.002
Subject(s) - electron paramagnetic resonance , materials science , annealing (glass) , silicon carbide , ion implantation , doping , aluminium , ion , silicon , crystallographic defect , vacancy defect , wide bandgap semiconductor , carbide , fabrication , analytical chemistry (journal) , optoelectronics , nuclear magnetic resonance , crystallography , chemistry , metallurgy , physics , organic chemistry , medicine , alternative medicine , pathology , chromatography