Open AccessDLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions
Author(s) -
N. A. Poklonski,
Н. И. Горбачук,
S. V. Shpakovski,
В. А. Филипеня,
А. С. Турцевич,
С. В. Шведов,
Nha Vo Quang,
Nguyễn Thị Thanh Bình,
В.А. Скуратов,
Andreas D. Wieck
Publication year - 2016
Publication title -
modern electronic materials
Language(s) - English
Resource type - Journals
eISSN - 2452-2449
pISSN - 2452-1779
DOI - 10.1016/j.moem.2016.09.001
Subject(s) - materials science , krypton , irradiation , deep level transient spectroscopy , diode , silicon , wafer , ion , fluence , analytical chemistry (journal) , atomic physics , spectral line , optoelectronics , chemistry , argon , physics , organic chemistry , chromatography , astronomy , nuclear physics
p+-n-Diodes have been studied. The diodes were manufactured on wafers (thickness 460 μm, (111) plane) of uniformly phosphorus doped float-zone-grown single-crystal silicon. The resistivity of silicon was 90 Ω cm and the phosphorus concentration was 5×1013 cm−3. The diodes were irradiated with 250 MeV krypton ions. The irradiation fluence was 108 cm−2. Deep-level transient spectroscopy (DLTS) was used to examine the defects induced by high energy krypton ion implantation. The DLTS spectra were recorded at a frequency of 1 MHz in the 78–290 K temperature range. The capacity-voltage characteristics have been measured at a reverse bias voltage from 0 to −19 V at a frequency of 1 MHz. We show that the main irradiation-induced defects are A-centers and divacancies. The behavior of DLTS spectra in the 150–260 K temperature range depends essentially on the emission voltage Ue. The variation of Ue allows us to separate the contributions of different defects into the DLTS spectrum in the 150–260 K temperature range. We show that, in addition to A-centers and divacancies, irradiation produces multivacancy complexes with the energy level Et = Ec−(0.5±0.02) eV and an electron capture cross section of ~4×10–13 cm2