
Precise band gap engineering using double barrier InGaN/GaN superlattices
Author(s) -
I. Gorczyca,
G. Staszczak,
G. Targowski,
Ewa Grzanka,
Julita Smalc-Koziorοwska,
Kazimierz Skrobas,
T. Suski
Publication year - 2022
Publication title -
micro and nanostructures
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2773-0131
pISSN - 2773-0123
DOI - 10.1016/j.micrna.2022.207327
Subject(s) - superlattice , wurtzite crystal structure , band gap , materials science , photoluminescence , condensed matter physics , quantum well , wide bandgap semiconductor , optoelectronics , electric field , metalorganic vapour phase epitaxy , electronic band structure , ab initio , physics , optics , nanotechnology , quantum mechanics , layer (electronics) , laser , epitaxy , zinc , metallurgy