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Robustness analysis of cellular memory in an autoactivating positive feedback system
Author(s) -
Cheng Zhang,
Liu Feng,
Zhang Xiao-Peng,
Wang Wei
Publication year - 2008
Publication title -
febs letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.593
H-Index - 257
eISSN - 1873-3468
pISSN - 0014-5793
DOI - 10.1016/j.febslet.2008.10.005
Subject(s) - robustness (evolution) , positive feedback , negative feedback , computer science , feedback loop , memory cell , control theory (sociology) , biological system , physics , biology , engineering , artificial intelligence , computer security , control (management) , transistor , quantum mechanics , voltage , gene , electrical engineering , biochemistry
Cellular memory is a ubiquitous phenomenon in cell biology. Using numerical simulation and theoretical analysis, we explored the robustness of cellular memory to intrinsic noise in a transcriptional positive feedback system. Without noise, the system could create two stable steady states and function as a memory module. Memory robustness index and mean first‐passage time were used to quantify the robustness of memory. Large cell size and strong cooperativity in binding enhanced memory storage remarkably. Adding a second positive feedback loop improved persistent memory significantly, whereas including a negative one destabilized memory storage. These are consistent with experimental observations. We interpret why positive feedback loops are actively involved in epigenetic memory from a dynamical systems perspective.