Open AccessInfluence of $$\hbox {Si}_{3}\hbox {N}_{4}$$ Si 3 N 4 layer on the electrical properties of Au/n-4H SiC diodes
Author(s) -
Fatih Yigiterol,
H. H. Güllü,
Esra Yıldız
Publication year - 2018
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/s12034-018-1586-2
Subject(s) - materials science , diode , thermionic emission , conductance , condensed matter physics , physics , energy (signal processing) , atomic physics , optoelectronics , electron , quantum mechanics
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