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Raman scattering studies of ultrashallow Sb implants in strained Si
Author(s) -
L. O’Reilly,
Nick S. Bennett,
P.J. McNally,
B.J. Sealy,
N. E. B. Cowern,
A. Lankinen,
Jaakko Tuomilehto
Publication year - 2007
Publication title -
journal of materials science materials in electronics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.489
H-Index - 75
eISSN - 1573-482X
pISSN - 0957-4522
DOI - 10.1007/s10854-007-9339-9
Subject(s) - raman spectroscopy , materials science , raman scattering , full width at half maximum , phonon , ion implantation , doping , germanium , silicon , optoelectronics , analytical chemistry (journal) , ion , condensed matter physics , optics , chemistry , physics , organic chemistry , chromatography

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