Surface structure of manganese gallium quantum height islands on wurtzite $${\mathbf {GaN}}{\mathbf{(000}}{\bar{\mathbf{1}}})$$ studied by scanning tunneling microscopy
Author(s) -
Jeongihm Pak,
Andrada-Oana Mandru,
Abhijit Chinchore,
Arthur R. Smith
Publication year - 2015
Publication title -
applied physics a
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.485
H-Index - 149
eISSN - 1432-0630
pISSN - 0947-8396
DOI - 10.1007/s00339-015-9272-3
Subject(s) - scanning tunneling microscope , wurtzite crystal structure , molecular beam epitaxy , gallium , bar (unit) , manganese , relaxation (psychology) , gallium nitride , materials science , crystallography , layer (electronics) , chemistry , condensed matter physics , epitaxy , nanotechnology , physics , hexagonal crystal system , psychology , social psychology , meteorology , metallurgy
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